Hao Zhu | Nanoelectronics | Innovative Research Award

Published on by Electrical Engineering

Innovative Research Award

Hao Zhu
Fudan University, China

Hao Zhu
Affiliation Fudan University
Country China
Scopus ID 55697924500
Documents 238
Citations 5,644
h-index 39
Subject Area Nanoelectronics
Event World Electrical Engineering Awards
Google Scholar z3GiPsoAAAAJ&hl

The Innovative Research Award recognizes sustained scholarly contributions in nanoelectronics and advanced electronic materials. Hao Zhu of Fudan University has established a significant research profile through publications, citations, and interdisciplinary investigations that contribute to the development of next-generation electronic systems and nanotechnology applications.[1]

Abstract

This article presents an overview of Hao Zhu’s academic achievements in nanoelectronics and related electronic engineering disciplines. With an extensive publication record and substantial citation impact, his research has contributed to understanding nanoscale materials, device architectures, and advanced semiconductor technologies. His scholarly activities reflect engagement with emerging challenges in electronic miniaturization, performance optimization, and sustainable technological development. The combination of scientific productivity, interdisciplinary collaboration, and measurable academic influence provides a basis for recognition through the Innovative Research Award within the World Electrical Engineering Awards framework.[1][2]

Keywords

Nanoelectronics, Semiconductor Devices, Electronic Materials, Nanotechnology, Advanced Manufacturing, Electrical Engineering, Research Innovation.

Introduction

Nanoelectronics represents a rapidly advancing field that integrates materials science, physics, and electrical engineering. Researchers working in this domain contribute to the development of smaller, faster, and more efficient electronic systems. Hao Zhu’s academic record demonstrates active participation in these advancements through scholarly research and publication activities.[2]

Research Profile

Affiliated with Fudan University, Hao Zhu has developed a research portfolio characterized by 238 indexed documents, more than 5,600 citations, and an h-index of 39. These indicators suggest sustained academic engagement and visibility within international research communities focused on nanoelectronics and related technological disciplines.[1]

Research Contributions

His contributions include investigations into nanoscale device behavior, advanced materials, and electronic system optimization. Research outputs have supported ongoing discussions regarding device performance, energy efficiency, and emerging fabrication methods. Collaborative studies have further expanded the practical relevance of nanoelectronic technologies in academic and industrial contexts.[3]

Publications

The publication portfolio encompasses journal articles, conference proceedings, and collaborative research papers. These works address semiconductor materials, nanoscale structures, and innovative electronic applications. The breadth of topics demonstrates consistent scholarly productivity and participation in internationally recognized research networks.[4]

Research Impact

Citation metrics indicate that the research has been referenced extensively by other scholars. Such engagement reflects academic influence and suggests that published findings have contributed to subsequent investigations within nanoelectronics and related engineering fields.[1]

Award Suitability

The combination of research productivity, citation performance, interdisciplinary relevance, and international visibility aligns with common evaluation criteria used for innovation-focused academic awards. These characteristics support consideration for recognition through the Innovative Research Award.[5]

Conclusion

Hao Zhu’s scholarly profile reflects sustained contributions to nanoelectronics research. Through extensive publication activity, citation impact, and engagement with emerging technologies, the researcher has established a record consistent with academic excellence and innovation in electrical engineering.

References

  1. Elsevier. (n.d.). Scopus author details: Hao Zhu, Author ID 55697924500. Scopus.
    https://www.scopus.com/authid/detail.uri?authorId=55697924500
  2. Google Scholar. (n.d.). Scholar profile and citation metrics.
    https://scholar.google.com/citations?user=z3GiPsoAAAAJ&hl=en
  3. Nature Nanotechnology. (2021). An in-memory computing architecture based on two-dimensional semiconductors for multiply-accumulate operations.
    https://doi.org/10.1038/s41467-021-23719-3
  4. IEEE. (2023). Binary semiconductor In2Te3 for the application of phase-change memory device.
    https://doi.org/10.1007/s10853-010-4401-z
  5. World Electrical Engineering Awards. (n.d.). Award evaluation framework and recognition criteria.
    https://electricalaward.com/

Mr. Xiangqi Dong | Nanoelectronics & Nanomaterials | Best Researcher Award

Published on by Electrical Engineering

Mr. Xiangqi Dong | Nanoelectronics & Nanomaterials | Best Researcher Award

PhD Candidate | Fudan University | China

Xiangqi Dong is a researcher in microelectronics at the School of Microelectronics and the National Key Laboratory of Integrated Chips and Systems at Fudan University, specializing in two-dimensional semiconductors, integrated circuit fabrication, and device–circuit co-optimization. He is pursuing a direct doctoral degree and holds an undergraduate background in Microelectronics Science and Engineering from Northwestern Polytechnical University, with focused academic training in microelectronics and solid-state electronics. His professional experience includes optimizing wafer-scale 2D transistor processes, supervising laboratory tape-out workflows, establishing quality-control procedures, integrating advanced fabrication tools, and leading a research team working on analog circuits and DTCO-driven circuit innovation. His research contributions encompass high-performance 2D gate-stack engineering, sensing-memory-computing fusion devices, neuromorphic electronics, RF systems, and next-generation computing architectures, resulting in significant publications in leading journals, invited conference talks, and contributions to landmark achievements such as 2D microprocessors, high-linearity flash ADCs, and wafer-scale integrated RF transmitters. He has co-filed patents on transistor structures and semiconductor process optimization, and actively participates in academic outreach to promote integrated circuit education. His recognitions include multiple merit-based scholarships and academic excellence awards, reflecting strong research capability and leadership. Citations 92 by 88 documents, 17 documents, h-index 5.

Profile: Scopus

Featured Publications

Xiangqi Dong, Radiation resistant atomic layer scale radio frequency system for spaceborne communication. Nature, Under review.

Xiangqi Dong, A RISC-V 32-bit microprocessor based on two-dimensional semiconductors. Nature, Published.

Xiangqi Dong, High-linearity flash ADC achieved through design-technology co-optimization based on two-dimensional semiconductors. Science Bulletin, Online.

Xiangqi Dong, A bio-inspired neuron with intrinsic plasticity based on monolayer molybdenum disulfide. Nature Electronics, Published.

Prof. Dr. Sudeb Dasgupta | Device Modelling and Simulation | Best Researcher Award

Published on by Electrical Engineering

Prof. Dr. Sudeb Dasgupta | Device Modelling and Simulation | Best Researcher Award

Professor | IIT Roorkee | India

Dr. Sudeb Dasgupta is a Professor in the Department of Electronics and Communication Engineering at the Indian Institute of Technology Roorkee, specializing in Microelectronics and VLSI Design. He earned his Ph.D. in Electronics Engineering from IIT-BHU and Master’s and Bachelor’s degrees from Banaras Hindu University with a focus on electronics and semiconductor devices. His academic career includes leadership as Head of Department and Group Head of Microelectronics and VLSI, with extensive experience in research and project management. Dr. Dasgupta’s research spans semiconductor device modelling, FinFET and nanosheet FET optimization, device-circuit co-design, and energy-efficient compute-in-memory architectures, supported by numerous national and internationally funded projects including DST and DRDO initiatives. He has authored over a hundred peer-reviewed publications in high-impact journals such as IEEE Transactions on Electron Devices and Solid-State Electronics, and holds multiple patents in emerging semiconductor technologies. An accomplished mentor, he has supervised more than 17 doctoral and 50 postgraduate students and continues to lead interdisciplinary research in nanoelectronics. Dr. Dasgupta is a Senior Member of IEEE, a fellow of the Indo-US Science and Technology Forum, Erasmus Mundus, and DAAD, and serves as a reviewer for prestigious IEEE and Elsevier journals. His career reflects a commitment to advancing semiconductor innovation through theoretical modeling, experimental validation, and educational excellence. He has over 4,032 citations, an h-index of 33, and an i10-index of 94, with Scopus metrics showing 2,253 citations, an h-index of 23, and an i10-index of 61.

Profile: Google Scholar 

Featured Publications

Sudeb Dasgupta*, The role of dielectric wall in Forksheet FET: Exploring electrical-thermal intercoupling. IEEE Trans. Dielectr. Electr. Insul., 2025.

Sudeb Dasgupta*, A 6T SRAM analog CIM macro for 8-bit MAC with input/weight partitioning for high signal margin and throughput. IEEE APCCAS Conf., 2025.

Sudeb Dasgupta*, Differential aging-aware STA for precise timing closure with reduced design margin. IEEE Trans. Device Mater. Reliab., 2025.

Sudeb Dasgupta, A robust 4T1C eDRAM compute-in-memory architecture for inference applications. IEEE NEWCAS Conf., 2025.