Dr. Songsong Guo | Quantum Computing  | Young Innovator Award

Published on by Electrical Engineering

Dr. Songsong Guo | Quantum Computing  | Young Innovator Award

Engineer | Xi'an Rare Metal Materials Research Institute Co., Ltd | China

Dr. Songsong Guo, a materials engineering specialist and Engineer at the Northwest Institute for Nonferrous Metal Research, is recognized for his expertise in advanced joining technologies, corrosion-resistant alloys, and nuclear-grade zirconium and titanium materials. He holds a doctorate in Materials Science and Engineering with a specialization in materials joining, supported by rigorous research training that shaped his proficiency in microstructure analysis, finite-element simulation, and corrosion-mechanism evaluation. His professional experience includes leading projects on Si₃N₄/316L stainless-steel brazed joints, dynamic corrosion testing of nuclear materials, and the development of high-performance zirconium alloys, along with key contributions to high-temperature alloy–ceramic joining and wear-resistant components for continuous dissolvers. Dr. Guo’s research focuses on multi-layer brazing design, residual-stress mitigation, joint reliability, and alloy corrosion behavior, resulting in multiple high-impact publications, an authorized patent, and significant advancements in corrosion-resistant material systems. His work is strengthened by active participation in multidisciplinary teams, development of experimental systems, and contributions to scientific innovation and materials-performance evaluation. He continues to advance the field through impactful research outputs, leadership in project execution, and engagement in the broader scientific community. He has achieved 223 citations across 184 documents, authored 13 publications, and holds an h-index of 10.

Profile: Scopus 

Featured Publications

Guo, Songsong*, Breakdown mechanism of MoO₃ passive film: Electrochemical measurements and first-principles calculations. Computational Materials Science, Accepted.

Guo, Songsong*, Microstructure and corrosion behavior of Si₃N₄/316L joints brazed with Ag-Cu/Ag/Mo/Ag/Ag-Cu-Ti multilayer filler. Electrochimica Acta, Accepted.

Guo, Songsong*, Residual stress, microstructure and corrosion behavior in the 316L/Si₃N₄ joint by multi-layered braze structure—experiments and simulation. Ceramics International, Accepted.

 

Prof. Dr. Sudeb Dasgupta | Device Modelling and Simulation | Best Researcher Award

Published on by Electrical Engineering

Prof. Dr. Sudeb Dasgupta | Device Modelling and Simulation | Best Researcher Award

Professor | IIT Roorkee | India

Dr. Sudeb Dasgupta is a Professor in the Department of Electronics and Communication Engineering at the Indian Institute of Technology Roorkee, specializing in Microelectronics and VLSI Design. He earned his Ph.D. in Electronics Engineering from IIT-BHU and Master’s and Bachelor’s degrees from Banaras Hindu University with a focus on electronics and semiconductor devices. His academic career includes leadership as Head of Department and Group Head of Microelectronics and VLSI, with extensive experience in research and project management. Dr. Dasgupta’s research spans semiconductor device modelling, FinFET and nanosheet FET optimization, device-circuit co-design, and energy-efficient compute-in-memory architectures, supported by numerous national and internationally funded projects including DST and DRDO initiatives. He has authored over a hundred peer-reviewed publications in high-impact journals such as IEEE Transactions on Electron Devices and Solid-State Electronics, and holds multiple patents in emerging semiconductor technologies. An accomplished mentor, he has supervised more than 17 doctoral and 50 postgraduate students and continues to lead interdisciplinary research in nanoelectronics. Dr. Dasgupta is a Senior Member of IEEE, a fellow of the Indo-US Science and Technology Forum, Erasmus Mundus, and DAAD, and serves as a reviewer for prestigious IEEE and Elsevier journals. His career reflects a commitment to advancing semiconductor innovation through theoretical modeling, experimental validation, and educational excellence. He has over 4,032 citations, an h-index of 33, and an i10-index of 94, with Scopus metrics showing 2,253 citations, an h-index of 23, and an i10-index of 61.

Profile: Google Scholar 

Featured Publications

Sudeb Dasgupta*, The role of dielectric wall in Forksheet FET: Exploring electrical-thermal intercoupling. IEEE Trans. Dielectr. Electr. Insul., 2025.

Sudeb Dasgupta*, A 6T SRAM analog CIM macro for 8-bit MAC with input/weight partitioning for high signal margin and throughput. IEEE APCCAS Conf., 2025.

Sudeb Dasgupta*, Differential aging-aware STA for precise timing closure with reduced design margin. IEEE Trans. Device Mater. Reliab., 2025.

Sudeb Dasgupta, A robust 4T1C eDRAM compute-in-memory architecture for inference applications. IEEE NEWCAS Conf., 2025.